Advances in Electronics and Electron Physics, Volume 62Advances in Electronics and Electron Physics |
Contents
Chapter 2 Predictions of DeepImpurityLevel Energies in Semiconductors | 101 |
Chapter 3 Recent Advances in the Electron Microscopy of Materials | 161 |
| 289 | |
Common terms and phrases
alloy antibonding antiferromagnetic aperture atomic atomic orbital backscattered backscattered electrons Band Edge band gap band structure beam energy binding energy bulk calculations cathodoluminescence chemical trends conduction band conduction-band contrast crystal D. T. Pierce deep impurities deep-trap defect defect matrix detector dislocation donors effects elastic scattering electron beam electron microscope emission Erbudak excitation experimental ferromagnetic GaAs H. C. Siegmann Hjalmarson hybridization impurity potential intensity interaction interface lattice lens Lett low-loss materials matrix measured metals microscopy objective lens observed obtained optical orbital oxygen photoelectrons photoemission photon photon energy photothreshold Phys predicted produce resonance sample scanning scattering plane secondary electrons Section semiconductor shown in Fig shows signal specimen spin dependence spin polarization spin-polarized electrons spin–orbit coupling surface magnetization surface normal symmetry technique temperature theory tight-binding tion transition trap valence valence band valence-band vector wave function X-ray