Analysis and Fabrication of the Opposed Gate Source Transistor |
Contents
CHAPTER | 4 |
Band bending at interface | 20 |
Effects of voltage asymmetry | 23 |
Copyright | |
5 other sections not shown
Common terms and phrases
active channel active layer AlGaAs aligned analysis attenuation Au:Ge back side back surface ballistic calculated capacitance carrier characteristic impedance Contour plots density depletion region Deposited energy distribution device performance device width distributed interaction drain line drain terminal drain voltage dual surface lithography electric field electron beam electron beam lithography electroplating equations equivalent circuit etch exposure fabrication field effect transistor Figure FREQUENCY GHz function GaAs Gain dB gate and drain gate and source gate level gate line gate step gate to source incident energy interface kV/cm load mask line MESFET Micrograph microstrip misalignment numerical device simulations OGST operation parameters plating base Plots of Gain PMMA point entrance polyimide protons right drain self-aligned dual surface source contact source current step response structure substrate terminal currents thickness top surface trajectories transconductance transmission line transport models tri-level resist values velocity voltage walha X-ray lithography