Japanese Journal of Applied Physics: Regular papers & short notes. Part 1, Volume 21, Pages 1-673Publication Board, Japanese Journal of Applied Physics, 1982 - Engineering |
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a-Si a-Si solar cell accepted for publication amorphous angle annealing Appl atoms band beam calculated characteristics coefficient concentration constant crystal curve decrease density dependence diffraction diffusion diode displacement vectors distribution domains doped effect electric field electron emission energy equation etching ferroelectric Figure frequency function growth helical pitch impurity in-diffusion increase InSe intensity interstitial laser lattice lattice constants layer lines magnetic measured method microdefects Mo film modulation N-area observed obtained optical oxidation oxygen pattern peak photoconductive photocurrent photodiode Phys plasma precipitates profiles pulse phase shift range region relaxation respectively RHEED rhombohedral room temperature sample screen-film system Semiconductors shown in Fig shows silicon solar cell solid solution specimens spectra sputtering gas pressure sputtering yield structure substrate surface Table target thermal thickness tion Torr UTWO voltage wafer whiskers width Wiener spectrum X-ray X-ray diffraction yield stress ZnO thin film