Silicon Carbide and Related Materials: ECSCRM ..., Proceedings of the ... European Conference on Silicon Carbide and Related MaterialsTrans Tech Publications., 2000 - Crystal growth |
Contents
Large Diameter Low Defect Silicon Carbide Boule Growth | 3 |
Progress in 4HSiC Bulk Growth | 21 |
Mass Transport and Powder Source Evolution in Sublimation Growth of SiC Bulk | 37 |
Copyright | |
56 other sections not shown
Common terms and phrases
2001 Trans Tech 6H SiC acceptor annealing Appl atoms axial band gap boron bulk calculated carbon centers cm² cm³ conduction band crucible crystal growth decrease defects density dependence deposition devices diameter diffraction diffusion diodes dislocations DLTS donor dopant doping effect electrical electron energy epilayer epitaxial growth epitaxial layers etching exciton experimental films formation Forum graphite grown growth rate hydrogen impurities increase interface investigated ion implantation irradiation Keywords lattice Lett material mbar measurements micropipes microscopy mobility MOSFETs nitrogen observed obtained optical oxide p-type parameters peak phonon photoluminescence Phys polytype powder reactor region samples Schottky Schottky diodes seed semiconductor shown in Fig shows SiC crystals silicon carbide SIMS simulation spectra spectroscopy spectrum structure substrate surface susceptor technique thermal thickness Trans Tech Publications traps vacancy valence band vanadium voltage wafer