T.E.C.A.P., an Automated Characterization System

Front Cover
Stanford University, 1979 - Electronic circuit design - 242 pages

From inside the book

 

Contents

3
21
CAPABILITIES
33
31
49

2 other sections not shown

Common terms and phrases

174 current meter 225 current source 445 current meter base current bias voltage bipolar calculated capacitance capacitor channel conductance collector current current limit CURRENT MEASUREMENT Dadvm DC CHARACTERIZATION Device address device under test DISP ERROR drain current drain voltage DVS1 DVS2 DVS3 ENTER Da445 Example floppy disk FNCon FNCurn FORMAT OUTPUT function gate voltage GOSUB GOSUB Idvs GOTO graphic CRT Hewlett-Packard high frequency high frequency C-V HP-IB HP-IB interface Idvs Imax input instruments Keithley 225 Keithley 445 current LABEL LCR meter MEASURE CURRENT model analysis model/parameter analysis MOS devices MOS transistor MOSFET node obtained oxide P-N junction performed PORT PRINT LIN(1 PROBE STATION relays resistor resolution S-parameter S-parameter measurement scanner connections Seti short circuit shown in Fig SUBEND subroutine substrate subthreshold switch TECAP threshold voltage TRANSCONDUCTANCE TRIGGER Vd MEASUREMENT Vdrop voltage source volts

Bibliographic information

TitleT.E.C.A.P., an Automated Characterization System
AuthorsEbrahim Khalily, Stanford University Stanford Electronics Laboratories
ContributorsStanford University. Department of Electrical Engineering, Stanford University Stanford Electronics Laboratories. Integrated Circuits Laboratory, Hewlett-Packard Corporate Design Aids
PublisherStanford University, 1979
Length242 pages
  
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