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EFFECTS OF TRANSISTOR CONSTRUCTION
TRANSISTOR CHARACTERISTICS INFLUENCING
7 other sections not shown
active region alloy transistor avalanche breakdown base current base region base-emitter behavior biased breakdown voltage calculated capacitance capacitor carriers clamp circuit collector current collector voltage collector-emitter condition constant current gain current mode curve data sheet depletion layer determined devices diffusion effect emitter current epitaxial equation factor failure rate flip-flop gain-bandwidth product germanium IcBO increases input inverter junction temperature latch-up leakage current limit load current load line mAdc maximum mesa transistors mesa type minimum mode circuits monostable multivibrator output levels pulse ratio recombination resistance resistor reverse bias reverse current saturated mode saturation region saturation voltage semiconductor shown in Figure signal silicon specified storage stored charge SVCE temperature coefficient tolerance transistor reliability transistor type trigger turn-off typical VBE2 volts waveform worst-case zener diode zero