Microwave Transistor Amplifiers: Analysis and Design

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Prentice Hall, 1997 - Technology & Engineering - 506 pages
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A unified presentation of the analysis and design of microwave transistor amplifiers (and oscillators) — using scattering parameters techniques. KEY FEATURES: Presents material on: transmission-lines concepts; power waves and generalized scattering parameters; measurements of scattering parameters; bipolar and field-effect transistors; power gain expressions; constant VSWR circles; gain, noise, and VSWR design trade offs; broadband amplifiers, high-power amplifiers; oscillator

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Contents

MATCHING NETWORKS AND SIGNAL FLOW GRAPHS
92
MICROWAVE TRANSISTOR AMPLIFIER DESIGN
212
NOISE BROADBAND AND HIGHPOWER
294
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