Analog VLSI and Neural SystemsA self-contained text, suitable for a broad audience. Presents basic concepts in electronics, transistor physics, and neurobiology for readers without backgrounds in those areas. Annotation copyrighted by Book News, Inc., Portland, OR |
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Page 309
... layer is insulated everywhere from the underlying materials by the layer of thin gate oxide and , in addition , by thicker oxide in some areas . The polysilicon will form the gates of all the transistors in the circuit and will also ...
... layer is insulated everywhere from the underlying materials by the layer of thin gate oxide and , in addition , by thicker oxide in some areas . The polysilicon will form the gates of all the transistors in the circuit and will also ...
Page 315
Carver Mead. The metal layer must surround the contact layer in much the same way that the diffused and polysilicon layers did . Because the resist material used for patterning the metal generally accumulates in the low areas of the ...
Carver Mead. The metal layer must surround the contact layer in much the same way that the diffused and polysilicon layers did . Because the resist material used for patterning the metal generally accumulates in the low areas of the ...
Page 321
... layer thickness . The total charge per unit area Qdep in the depletion layer is this thickness times the bulk charge density p : Q dep = pxo = ± √2pes This expression allows us to define a depletion - layer capacitance Cdep : ( B.2 ) ...
... layer thickness . The total charge per unit area Qdep in the depletion layer is this thickness times the bulk charge density p : Q dep = pxo = ± √2pes This expression allows us to define a depletion - layer capacitance Cdep : ( B.2 ) ...
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action potential amplitude analog approximately auditory average axon basilar membrane behavior biological capacitance capacitor channel length Chapter chip cochlea computation conductance constant constraint line cues current mirror curves decreases delay line dendritic density derivative device differential differential pair diffusion drain current edge effect electrical electrons energy equal Equation exponential feedback follower-integrator circuit frequency gain gate voltage gradient hair cells horizontal horizontal cells increase input voltage intensity layer limit linear system magnitude measured millivolts mobile charge molecules multiplier negative nerve pulse neuron node operation output current output voltage oxide p-channel particles photoreceptor pinna-tragus pixel plot polysilicon positive propagate RC circuit region resistive network resistor response result retina reversal potential schematic second-order section SeeHear shown in Figure signal silicon sodium solution spatial substrate surface potential synapse tanh transconductance amplifier transfer function transistor two-dimensional V₁ V₂ visual Vout wave wire zero