State-of-the-Art Program on Compound Semiconductors XXXVIII and Wide Bandgap Semiconductors for Photonic and Electronic Devices and Sensors III: Proceedings of the International Symposia

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Edward B. Stokes, Electrochemical Society. Electronics Division, Electrochemical Society. Sensor Division
The Electrochemical Society, Jan 1, 2003 - Compound semiconductors - 278 pages
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Contents

Improvement of Kink Characteristics of 850nm AlGaAsGaAs Implant Vertical
9
IIIV Devices and Processing
24
Solventaffected Chemistry at GaAssulfide Solution Interface
38
Table of Contents page
48
A Mechanistic Study of Anodic Formation of Porous InP
63
Localized Photoetching of nInP at Opencircuit Potential
83
HRTEM Study of SiC Buried Layer formed by C+ Implantation in Silicon
98
MOCVD Growth of InPInGaAlAs Distributed Bragg Reflectors
115
IllNitride Light Emitting Diodes
152
Carrier Capture and Recombination at Localized States in InGaNGaN
166
AlGaN Power Rectifiers
191
Physics of Electron InjectionInduced Effects in IllNitrides
208
Table of Contents page
214
Optical Properties of IllNitride Materials
229
Spectroscopic Ellipsometry Applied to the Characterization
258
Subject Index
276

Fabrication and N02 Surface Photo Voltage Sensor Properties of Nanoporous
130
Table of Contents page
134

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