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Crystal Structure Change of GaAs and InAs Whiskers from Zinc 2061 Masanari Koguchi Hiroshi Kakibayashi
Enhancement of Mobility in Pseudomorphic FETs with Up and 2071 Herb Goronkin Jun Shen Saied Tehrani
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absorption accepted for publication AlGaAs alloy angle anisotropy annealing Appl atoms band gap beam bipolaron Burgers vector calculated CdSe cell coefficient concentration conduction band constant crystal CSNR decrease density deposition device diamagnetic dielectric dielectric constant diffraction diffusion dislocations distribution dopant doping effect electrical electron emission emitter energy epitaxial etch rate experimental Figure frequency function GaAs growth IEEE ignition impurity increase intensity interface KEYWORDS laser lattice layer Lett magnetic field measured metal method monolayer n-type observed obtained optical oxide oxygen parameters pattern peak phase Phys plane plasma positron pressure Proc pulse pyroelectric ratio region resistance sample scanning tunneling microscopy semiconductor shown in Fig shows silicon sintered solar cell solid solution specimen spectra sputtering structure substrate substrate temperature surface thermal thickness tion tokamak Tokyo ture undoped valence band voltage wafer wavelength width X-ray X-ray diffraction