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Japanese Journal op Applied Physics Vol 10 No 9 September 1971
ATST Structural Analyses of the and r Alloys of AlMg Kazuhisa Taketoshi
23 other sections not shown
absorption activation energy alloy angle anisotropy annealing appl applied atoms axis band beam calculated carrier characteristics coefficient concentration condition conductivity curve decreases density dependence deposition dielectric constant diffraction diode distribution domain effect electric field electron emission energy epitaxial equation experiment experimental results factor Figure film flow birefringence frequency function GaAs germanium growth image lag impurity increase intensity ions irradiation Japan Landau levels laser lattice layer light magnetic field measured metal method microwave mobility mode observed obtained optical oscillation output oxide parameters partial pressure particles peak phase phonon photoconductivity photodiode Phys plane plasma polarization potential pressure probe proton pulse radiation ratio region resistance respectively room temperature rotating sample scattering semiconductor shown in Fig shows signal silicon single crystals solid solution specimen spectra structure substrate surface tellurium thermal thickness tion Tokyo tube vapor voltage wave wavelength width X-ray