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A Survey of FieldEffect Transistors
B Survey of Advanced Theoretical
7 other sections not shown
2-D analysis 2-D MESFET active layer analyzed anisotropic analysis Baechtold calculated capacitance carrier accumulation carrier concentration versus continuity Equation convergence criteria current continuity current density cut-off frequency depletion region dipole layer distributions and potential doping level Drain characteristics drain conductance drain current drain end drain voltage drift velocity electric field experimental FET's FFT and SOR field-dependent figures of merit GaAs and InP GaAs device GaAs FET GaAs MESFET model gate MESFET's model gradual channel half-micron-gate MESFET's model InP devices InP FET InP MESFET model isotropic kV/cm Lehovec MESFET analysis MESFET's model C.2 Mobile carrier concentration mobile carrier density Mobile carrier distributions model A.2b numerical numerical analysis obtained one-micron-gate MESFET's model p-n junction Parameters for model pinch-off Poisson's equation potential contour Schottky barrier shown in Fig substrate tensor diffusivity transconductance v-E curve velocity overshoot velocity saturation velocity-field curve ym depth ym gate