Fabrication Technology for Microwave GaAs Field Effect Transistors |
Common terms and phrases
15 seconds 60 seconds 8m sat acetone agitation alignment aluminum approximately Au-GaAs AuGe avalanche breakdown barrier height beam behavior calculated cleaning contact pads Contact resistance versus current-voltage depletion region devices diffusion diode doping concentration drain current edge effect electric field electron electron beam lithography energy equation etching evaporation exposure FET pattern field effect transistor field emission GaAs gate length gate metal heating I-V characteristic improved interface low frequency FET lower material measured mesa MESFET metal work function metal-semiconductor methanol microwave FET's minutes mobility n-type GaAs n-type semiconductor Ni/AuGe Ni/AuGe/Ni ohm-cm ohmic contact oxide p-n junction parameters permittivity Photograph photolithography photomasks photoresist procedure reduce Rinse Schottky barrier semi-insulating shown in Figure shows soak solution source and drain source resistance Source-Drain Resistances specific contact resistance substrate theory thermionic emission thin tion transconductance transistor typical vacuum values velocity wafer width ΔΟ