In-situ patterning: selective area deposition and etching : symposium held November 29-December 1, 1989, Boston, Massachusetts, U.S.A.
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SURFACE CHEMISTRY OF DIMETHYLALUMINUM HYDRIDE
MECHANISM OF CHROMIUM DEPOSITION FROM CrCO6 BY UV LASER
58 other sections not shown
1990 Materials Research ablation absorption adsorbed AlGaAs aluminum annealing Appl atoms azobenzene carbon CdTe chemical chemical vapor deposition copper copper chloride damage decomposition dependence deposition rate depth desorption devices diffusion DMAH dopant doping electron epitaxial etch rate excimer laser experimental exposure fabricated Figure fluence GaAs gas phase germanium growth rate heating HEMT hydrogen implanted increase ion implantation irradiation ISBN laser beam laser fluence laser power laser pulse laser-induced layer Lett LPCVD Materials Research Society measured melting metal molecules observed optical oxide palladium acetate patterning peak photon Phys planarization plasma PMMA polyimide polymer pressure Proc produced reaction reactive reactive ion etching region resistance sample scan selective semiconductor shown in Fig shows silicon spectra structures substrate substrate temperature surface Symp technique Technology thermal thin films Torr transistors trench tungsten vapor deposition Volume wafer wavelength