Gallium Nitride and Related Materials II: Volume 468C. R. Abernathy, H. Amano, J. C. Zolper This book from MRS dedicated to III-Nitrides, focuses on developments in AlN, GaN, InN and their alloys that are now finding application in short-wavelength lasers (~400nm, cw at room temperature) and high-power electronics (2.8W/mm at GHz). Experts from fields including crystal growth, condensed matter theory, source chemistry, device processing and device design come together in the volume to address issues of both scientific and technological relevance. And while much of the book reports on advances in material preparation and the understanding of defect issues, similar advances in material and device processing are also reported. Topics include: growth and doping; substrates and substrate effects; characterization; processing and device performance and design. |
Contents
Impurity Contamination of GaN Epitaxial Films From | 3 |
Growth and Characterization of InBased Nitride | 13 |
MOVPE Growth and Characterization of AlxGa1xN Layers | 23 |
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Common terms and phrases
AIN films AlGaN annealing Appl atoms band gap C.R. Abernathy carrier chemical vapor deposition cm¹ cm³ concentration conduction band crystalline cubic decrease defects density deposition depth profiles devices diffraction diodes dislocations dopants doping electron emission energy epilayers epitaxial excitation exciton experimental Figure GaAs gallium gallium nitride GaN crystals GaN etch rates GaN films GaN layers growth temperature implantation increased InGaN intensity interface laser lattice parameters layers grown Lett LiGaO2 luminescence material measurements Mg-doped microscopy MOCVD molecular beam epitaxy MOVPE Nakamura nitride nitrogen observed obtained ohmic contacts optical p-type peak phase phonon photoluminescence Phys plane plasma polarization pressure pyrolysis quantum Raman room temperature S.J. Pearton sample sapphire sapphire substrates scattering semiconductor Senoh shown shows SIMS specific contact resistance spectra spectrum stacking faults structure substrate thermal thickness valence band Wavelength wurtzite zincblende