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DeepUV lithography for prototype 64megabit DRAM fabrication 167425
Fundamental differences between positive and negativetone imaging 167426
23 other sections not shown
aerial image algorithm alignment accuracy alignment marks ARCOR ARCOR process ARCOR-2 best focus bias Chromium coating condenser tilt contact hole contour conventional mask cost function CQUEST defocus delineation depth of focus developed diffraction DRAM equation etch experimental focal plane focus latitude focus positions image intensity image monitor image shift improvement intensity slope laser layer layout light lines and spaces log-slope mask in Figure mask pattern measured Microlithography micron misalignment negative resist normalized numerical aperture optical lithography optical planes Optical/Laser Microlithography optimized parameters partial coherence peak intensity phase-shifting mask photolithography photoresist photoresist thickness point spread function proximity effect reduced refractive index resist film resist pattern resist thickness resolution shift mask shifter shown in Figure shows simulation spatial Spectralith Strehl ratio structure substrate technique thin film interference TM polarization topography transmission mask variation wafer wavelength width X/NA