Optical microlithography V: 13-14 March 1986, Santa Clara, California
SPIE--the International Society for Optical Engineering, 1986 - Technology & Engineering - 309 pages
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SESSION 2A IMPROVING PATTERN OVERLAY 1
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achieve aerial image alignment marks alignment system chrome curve dagger defect defocus depth of focus developed device diffraction dimension e-beam electron entrance pupil equipment etching evaluation excimer laser exposure dose exposure field feature focal focus setting function g-line glass wafer i-line illumination image field improved inspection intensity layer lenses lines and spaces linewidth magnification mask edge measured method Microlithography micron microscope modulation numerical aperture optical lithography Optical Microlithography optical system overlay accuracy parameters partial coherence performance photolithography photomask photoresist plane polysilicon position pressure printability production projection lens proximity effects Rasterizer Engine reduction lens resist process resist profile reticle rotation sample scanning Semiconductor sensitivity shown in Figure shows sigma simulation spacewidth spatial spatial filter SPIE stage step step and repeat structures submicron substrate surface technique Technology telecentricity throughput variation vernier vibration vote-taking wafer mark wafer stepper wavelength width