Silicon Carbide 2002 - Materials, Processing and Devices:, Volume 742
Stephen E. Saddow, David J. Larkin, Nelson S. Saks, Adolf Schoener
Materials Research Society, Mar 25, 2003 - Technology & Engineering - 404 pages
Advances in silicon carbide materials, processing and device design have recently resulted in implementation of SiC-based electronic systems and offer great promise in high-voltage, high-temperature and high-frequency applications. This volume focuses on new developments in basic science of SiC materials as well as rapidly maturing device technologies. The challenges in this field include understanding and decreasing defect densities in bulk SiC crystals, controlling morphology and residual impurities in epilayers, optimization of implant activation and oxide-SiC interfaces, and developing novel device structures. This book brings together the crystal growers, physicists and device experts needed to continue the rapid pace of silicon-carbide-based technology. Topics include: epitaxial growth; characterization/defects; MOS technology; SiC processing and devices.
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Epitaxial Growth and Characterization of 4HSiCl 120 and 0338
Channel EpiUxy of 3CSiC on Si Substrates by CVD _
Modeling Analysis of FreeSpreading Sublimation Growth
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2003 Materials Research 3C SiC amorphous annealing Appl atoms barrier height bonds boron breakdown voltage carbon chemical chemical vapor deposition concentration contact resistance crystal crystalline current density curve defects deposition devices diffraction diffusion doping effect electrical electron energy epilayer epitaxial growth epitaxial layers etching excimer laser experimental fabricated factor Forum grown GTOs high temperature homoepitaxial hydrogen images implanted sample interface ion implantation lattice Lett Materials Research Society measured mesa micropipes MOSFETs nitrogen observed obtained ohmic contact optical oxide p-type parameters peak phase phonon Phys plane polytype porous Proc properties region room temperature scattering Schottky barrier Schottky diodes screw dislocations semi-insulating semiconductor shown in figure shows SiC film SiC layer SiC substrates SiC surface SiC wafers silicon carbide SIMS SiO2 spectra spectroscopy stacking structure substrate switching Symp technique thermal thickness trap values wafer X-ray