Silicon Carbide 2002 - Materials, Processing and Devices:, Volume 742

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Stephen E. Saddow, David J. Larkin, Nelson S. Saks, Adolf Schoener
Materials Research Society, Mar 25, 2003 - Technology & Engineering - 404 pages
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Advances in silicon carbide materials, processing and device design have recently resulted in implementation of SiC-based electronic systems and offer great promise in high-voltage, high-temperature and high-frequency applications. This volume focuses on new developments in basic science of SiC materials as well as rapidly maturing device technologies. The challenges in this field include understanding and decreasing defect densities in bulk SiC crystals, controlling morphology and residual impurities in epilayers, optimization of implant activation and oxide-SiC interfaces, and developing novel device structures. This book brings together the crystal growers, physicists and device experts needed to continue the rapid pace of silicon-carbide-based technology. Topics include: epitaxial growth; characterization/defects; MOS technology; SiC processing and devices.

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Contents

Epitaxial Growth and Characterization of 4HSiCl 120 and 0338
3
Channel EpiUxy of 3CSiC on Si Substrates by CVD _
15
Modeling Analysis of FreeSpreading Sublimation Growth
23
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