Silicon Carbide--materials, Processing and Devices, Volume 742Materials Research Society, 2002 - Semiconductors |
Contents
Epitaxial Growth and Characterization of 4HSiC1120 and 0338 | 3 |
Channel Epitaxy of 3CSiC on Si Substrates by CVD | 15 |
Modeling Analysis of FreeSpreading Sublimation Growth | 23 |
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2003 Materials Research 3C SiC amorphous annealing Appl atoms barrier height bonds boron breakdown voltage carbon chemical chemical vapor deposition cm² cm³ concentration contact resistance crystal crystalline current density curve defects deposition devices diffraction diffusion doping effect electrical electron energy epilayers epitaxial growth epitaxial layers etching excimer laser experimental fabricated Forum grown high temperature homoepitaxial images implanted sample interface ion implantation laser lattice Lett Materials Research Society measured mesa micropipes MOSFETs nitrogen observed obtained ohmic contact optical oxide p-type parameters peak phase phonon Phys plane polytype porous Proc properties region room temperature scattering sccm Schottky barrier Schottky diodes screw dislocations semi-insulating semiconductor shown in figure shows SiC film SiC substrates SiC surface SiC wafers SiCOI silicon carbide SIMS SiO2 spectra spectroscopy stacking structure substrate susceptor switching Symp thermal thickness values wafer X-ray