Proceedings of the ... International Microelectronics SymposiumInternational Society for Hybrid Microelectronics, 1975 - Microelectronics |
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Page 84
... threshold voltage with temperature bias stress . The stabilization is controlled by measuring the sheet resistivity of a sample of silicon sub- jected to the phosphorus diffusion . A sheet resistivity of 30 to 50 2/0 is obtained for a ...
... threshold voltage with temperature bias stress . The stabilization is controlled by measuring the sheet resistivity of a sample of silicon sub- jected to the phosphorus diffusion . A sheet resistivity of 30 to 50 2/0 is obtained for a ...
Page 87
... threshold voltage of the invertors of the ring is illustrated in Fig . 7 , as the variation of the minimum supply voltage necessary for oscil- lation . A similar behaviour is obtained when only one inverter among all the others has got ...
... threshold voltage of the invertors of the ring is illustrated in Fig . 7 , as the variation of the minimum supply voltage necessary for oscil- lation . A similar behaviour is obtained when only one inverter among all the others has got ...
Page 91
... threshold voltage V , control of both p and n channel transistors ( on the same wafer for CMOS circuitry ) T the limited surface dopant source for the controlled diffusion of p - type wells for n channel transistors in CMOS circuits ...
... threshold voltage V , control of both p and n channel transistors ( on the same wafer for CMOS circuitry ) T the limited surface dopant source for the controlled diffusion of p - type wells for n channel transistors in CMOS circuits ...
Contents
Memory Devices | 1 |
Testing Problems Associated with a 4096 Bit MOS Memory by Don Knowlton | 8 |
A Testing Turnaround | 16 |
Copyright | |
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addition aluminum analysis application assembly attach base beam beam lead bonding cause ceramic chip circuit complete conductive conductor cost cycle device diffusion effect electrical Electronic elements energy epoxy equipment failure Figure flame function glass gold heat hybrid implantation increase integrated circuits ion implantation layer lead frames limited logic machine manufacturers material measured memory metal method microelectronics microprocessor module molded operation output oxide package pads paste pattern performance pins plated position present problems production pulse radiation rays reduce reference reliability removal replacement resistance resistor seal selected semiconductor shown shows silicon silver silver plated solder standard step structure substrate surface Table technique temperature thermal thick film thin film tool typical units voltage wafer wire yield