Design and Fabrication of Monolithic Broadband Microwave GaAs Low Noise FET Amplifiers |
Contents
CHAPTER TITLE PAGE | 6 |
INTRODUCTION 1 | 9 |
DESIGN CONSIDERATIONS OF MONOLITHIC | 9 |
9 other sections not shown
Common terms and phrases
3008 GaAs MESFET airbridge APPLICON CAD check-plot associated gain BIAS TEE bond wire inductance capacitance Characteristic impedance check-plot of AMP circuitry configuration contact lithography Cornell 3008 GaAs Cornell 3008 ion-implanted device dielectric elements equivalent circuit equivalent noise resistance etch fabrication films Fmin GaAs monolithic GaAs substrate gain and noise gallium arsenide gate line gate metallization gate resistance gate width ground plane IDSS implanted inductor input and output integrated circuits interdigitated Lange coupler Lange coupler layer layout low noise GaAs low-noise amplifier matching networks measured mesa micrograph microns microstrip line microstrip transmission line microwave integrated circuits mid-UV minimum noise figure MMIC monolithic microwave noise amplifier noise bias conditions noise FET noise figure noise parameters ohmic contact optimal noise source overlay capacitor Photograph photoresist polyimide power gain resistor S-parameters semi-insulating shown in Figure source resistance spiral inductor technique test fixture thickness transconductance