## Fundamentals of Semiconductors: Physics and Materials Properties (Google eBook)This fourth edition of the well-established Fundamentals of Semiconductors serves to fill the gap between a general solid-state physics textbook and research articles by providing detailed explanations of the electronic, vibrational, transport, and optical properties of semiconductors. The approach is physical and intuitive rather than formal and pedantic. Theories are presented to explain experimental results. This textbook has been written with both students and researchers in mind. Its emphasis is on understanding the physical properties of Si and similar tetrahedrally coordinated semiconductors. The explanations are based on physical insights. Each chapter is enriched by an extensive collection of tables of material parameters, figures, and problems. Many of these problems 'lead the student by the hand' to arrive at the results. The major changes made in the fourth edition include: an extensive appendix about the important and by now well-established deep center known as the DX center, additional problems and the solutions to over fifty of the problems at the end of the various chapters. Some of the solutions contain extensionst via discussions about topics of current interest in the field of semiconductor physics, such as spin-orbit coupling and k-linear band dispersion. |

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Simple yet elegant.

### Contents

3 Vibrational Properties of Semiconductorsand ElectronPhonon Interactions | 107 |

4 Electronic Properties of Defects | 159 |

5 Electrical Transport | 203 |

6 Optical Properties I | 243 |

7 Optical Properties II | 345 |

8 Photoelectron Spectroscopy | 427 |

9 Effect of Quantum Confinement on Electronsand Phonons in Semiconductors | 469 |

Pioneers of Semiconductor Physics Remember | 552 |

Solutions to Some of the Problems | 583 |

Recent Development | 673 |

Recent Developments and References | 686 |

719 | |

754 | |

### Common terms and phrases

absorption acceptors acoustic phonons approximation assume atoms axis band structure bandgap binding energy bond Brillouin zone calculated carriers coefficient components conduction band constant corresponding Coulomb crystal curves deep centers defects defined deformation potentials denoted density dependence diamond dielectric function direction dispersion displacement donor DX centers effective mass electric field electron energy electrons and holes emission equation excited exciton experimental free electron frequency GaAs given Hamiltonian impurity indirect bandgap interaction interface irreducible representations known labeled laser layer levels matrix element modes obtained optical phonons orbitals oscillations parameters peaks photon energy Phys point group polariton polarization Problem pseudopotential quantum quantum dots Raman scattering Raman tensor resonant result rotation sample schematically Sect shown in Fig solid spectra spectroscopy spectrum spin–orbit splitting strain tensor superlattice surface symmetry operations Table temperature tion transitions unit cell valence band wave functions wavevector wurtzite zero zinc-blende zinc-blende-type semiconductors