A Thermodynamic Investigation of Indium-transition Metal Ohmic Contacts to N-type Gallium Arsenide, and an Overview of the Thermochemical Behavior of Quaternary Gallium-indium-(transition of Noble Metal)-arsenic SystemsUniversity of Wisconsin--Madison, 1994 - 370 pages |
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Contents
Experimental Procedure | 18 |
4 | 108 |
Ohmic Contacts to InAs and InGaAs | 141 |
1 other sections not shown
Common terms and phrases
annealing Appl atoms Compositions of Phases conduction band constituent binary phases crystal structure depicted in Fig Determined by EPMA diffraction pattern electrical properties Electron Electron Probe Microanalysis enthalpy of formation equilibrium with InAs estimated exchange mechanism experimentally Fermi level Ga-In-Ni System Ga-In-Ni-As Ga-In-Pt-As Ga-Ni-As Ga-Pt-As Ga1-xAs GaAs Gibbs energies Gross Sample Compositions Identified by X-Ray In-M-As phase diagrams In-M-As systems In-Ni In-Ni-As In-Pt phases In-Pt-As In-rich InGaAs interface InxGa1-xAs lattice parameters liquid low temperatures melting metal arsenides metal gallides Murakami Ni-Au-Ge contacts Ni-In contacts Ni₂In3 Ni3Ga NiAs NiGa ohmic contacts OsAs2 PdIn phase diagram phase equilibria Phases Determined Phases Identified Phys present investigation Pt layer Pt3Ga Pt3In Pt5InAs PtAs2 PtGa PtGa2 PtIn2 region regrowth mechanism Schottky barrier semiconductor solution phase specific contact resistance stability stable contact materials substrate system at 600 Table ternary phase thermionic emission thermodynamic data thermodynamic equilibrium three-phase tie-lines transition metal X-ray diffraction