Lattice Defects in CrystalsTadeusz Figielski |
Contents
Survey lectures | 7 |
Процессы образования перестройки и миграции дефектов | 37 |
Radiationinduced defects in ionic crystals J Z Damm | 53 |
27 other sections not shown
Common terms and phrases
absorption angle annealing Appl atoms Auger beam bicrystal Bloch waves boron boundary Burgers vector calculated carrier cathodoluminescence centers concentration conduction band contrast cross slip curve deformed dependence diffraction diffusion diode dislocation line dislocation loops displacement dopant doped dose edge dislocations effect electrical electron microscope emission energy epitaxial epitaxial layers equation etch exciton experimental ferroelectrics film formation function glide growth implanted intensity interaction interface interstitial investigations ionization ions irradiation kink lattice defects measured mechanism metals method micrograph n-type neutron nucleation observed obtained p-n junctions parameters peak photoconductivity Phys plane point defects radiation recombination region sample screw dislocations semiconductors shown in Fig shows signal silicon solid specimen spectra stacking fault Stat structure substrate surface temperature thermal thickness tion topographs transition transmission electron microscopy vacancy valence band voltage wave X-ray дефектов дефекты дислокаций может образования рис