Hot-carrier effects in MOS devices

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Academic Press, 1995 - Science - 312 pages
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The exploding number of uses for ultrafast, ultrasmall integrated circuits has increased the importance of hot-carrier effects in manufacturing as well as for other technological applications. They are rapidly movingout of the research lab and into the real world.
This book is derived from Dr. Takedas book in Japanese, Hot-Carrier Effects, (published in 1987 by Nikkei Business Publishers). However, the new book is much more than a translation. Takedas original work was a starting point for developing this much more complete and fundamental text on this increasingly important topic. The new work encompasses not only all the latest research and discoveries made in the fast-paced area of hot carriers, but also includes the basics of MOS devices, and the practical considerations related to hot carriers.

Key Features
* Chapter one itself is a comprehensive review of MOS device physics which allows a reader with little background in MOS devices to pick up a sufficient amount of information to be able to follow the rest of the book
* The book is written to allow the reader to learn about MOS Device Reliability in a relatively short amount of time, making the texts detailed treatment of hot-carrier effects especially useful and instructive to both researchers and others with varyingamounts of experience in the field
* The logical organization of the book begins by discussing known principles, then progresses to empirical information and, finally, to practical solutions
* Provides the most complete review of device degradation mechanisms as well as drain engineering methods
* Contains the most extensive reference list on the subject

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Contents

CHAPTER 7
24
CHAPTER 3
40
CHAPTER 2
43
HotCarrier Device Degradation
66
CHAPTER 4
91
HotCarrier Effects at Low Temperature and
122
CHAPTER 6
134
AsP Double Diffused Drain DDD Versus Lightly Doped
147
CHAPTER 8
175
References
187
Index
303
Copyright

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About the author (1995)

Hitachi Ltd.