Characterization of Very High Speed Semiconductor Devices and Integrated Circuits: 23-25 March 1987, Bay Point, FloridaRavi Jain |
Contents
68 High electron mobility transistors for millimeter wave and high speed digital IC | 67 |
Testing monolithic GaAs MMIC circuits | 103 |
120 Electrical sampling techniques | 132 |
Copyright | |
6 other sections not shown
Common terms and phrases
2DEG amplifier amplitude analyzer applications bandwidth base bias bipolar transistors capacitance carrier characterization chip collector conduction band conductor configuration coplanar delay density detector device device under test diode doping level drain e-beam effect electric field electrical pulses electro-optic sampling electron mobility emitter energy extraction field fabricated frequency function GaAs gain-switched geometry grid HEMT heterojunction heterojunction bipolar transistors high speed high-speed IEEE injection input integrated circuits interface laser pulses layer Lett logic MESFET micron microstrip microwave modelocked MODFET modulator Mourou nodes noise optical pulses optoelectronic oscilloscope output package parameters performance photoconductive photoelectron photoemission photoemission sampling photon Phys picosecond potential probe propagation psec risetime S-parameters sampler sampling gate sampling pulse Scanning scanning electron microscope semiconductor shown in Figure signal stroboscopic structure substrate switching technique temporal resolution test fixture transit transmission line ultrafast velocity VLSI voltage contrast wafer waveform width