Ferroelectric Thin Films IV:
Seshu B. Desu, R. Ramesh, T. Shiosaki, Bruce A. Tuttle
Materials Research Society, Aug 8, 1995 - Technology & Engineering - 623 pages
This book represents the latest technical information from academia, government organizations and industry on ferroelectric thin films. Highlights can be separated into four major categories: the first public technical disclosure of the materials processing and characterization of the much-acclaimed 'Y1' nonvolatile memory material; enhanced understanding of the role of electronic and ionic defects in ferroelectric thin film degradation; extensive technical progress in metalorganic chemical vapor deposition of ferroelectric thin films; and the development of enhanced process integration techniques for ferroelectric thin films with semiconductor technology. In addition, improved process technologies that are bringing the optical properties of these complex, multicomponent oxide films to the verge of commercial viability, are discussed. Topics include: layered structure ferroelectrics; characterization; photonic phenomena; process integration issues; dram thin film technology; chemical vapor deposition; solution deposition; vapor deposition; pulsed laser deposition and piezoelectric and IR thin film technology.
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LAYERED STRUCTURE OXIDES FOR FATIGUE FREE FERROELECTRIC
CRYSTALLIZATION AND TEXTURE OF BiCONTAINING LAYERED
STRUCTURAL AND FERROELECTRIC PROPERTIES OF SrBiTa0
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1995 Materials Research alkoxides annealing Appl applied behavior bias bottom electrode BST films c-axis capacitance Ceram charge coercive field crystalline cycles decrease deposition temperature Desu devices dielectric constant domain effect electrical properties electrode epitaxial experimental fatigue ferroelectric capacitors ferroelectric thin films Figure film thickness films deposited films grown films were deposited frequency grain growth hysteresis loop imprint increase interface lattice constant lead zirconate titanate leakage current density Lett Materials Research Society measured microstructure MOCVD mode mtorr observed obtained optical orientation oxide oxygen parameters peaks perovskite Phys PLZT capacitors polycrystalline precursor Proc pulsed laser deposition pyrochlore pyroelectric PZT films PZT thin films rapid thermal annealing remanent polarization samples shown in Fig shows sol-gel solution sputtering stoichiometric structure substrate substrate temperature superlattices surface switching Symp target tetragonal thermal titanate top electrode values vapor voltage X-ray diffraction XRD patterns YBCO