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Novel Method for InSitu Monitoring of Thickness of Silicon Wafer during Wet Etching
Improvement of ThinFilm Multijunction Thermal Converters at KRISS S M 0632
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accelerometer Actuators adsorption aldehydes applied bonding cavity cell concentration cell counters chemical coating contact angle control volume CoTPP decreases deposited detection diaphragm electrical electrode ellipsometry etching experimental fabricated Figure frequency gas sensor gases gauge coefficients gray-scale heater heating IEEE immobilization immunosensor increased Korea LAPS device layer magnetic powder mask measured mechanical membrane MEMS method micromachined MOSFET MYU Tokyo nanoparticle obtained optical fiber oxide oxygen p-type p-type polysilicon parameters pattern peak penicillin performed photoresist piezoelectric piezoresistive piezoresistors plate plate electrodes polymer polysilicon pressure protein pulse tube cryocooler PZT films ratio resistance resistor response sample semiconductor Sens sensing sensitivity Sensors and Materials shown in Fig shows signal simulation sol-gel solution specimen squeeze film ssues structure substrate surface technique Technology temperature thermal thick-film resistor thickness thin film transducers ultrasonic University voltage wafer wet etching Young's modulus