High-power GaAs FET AmplifiersThis book is intended for systems engineers, hybrid and monolithic power amplifier designers, engineers involved in the development of CAD programs, academics, and industrial and goverment researchers. The book is devoted exclusively to high power GaAs FET amplifier design, covering the subject comprehensively, including FET design, circuit design, thermal and reliability analysis, and systems applications. |
From inside the book
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Page 208
... amplitude imbalance in decibels . Using this expression , combining loss contours are plotted in Figure 4.12 , which emphasize the importance of phase balance over amplitude balance . These computations assume that the signal sources ...
... amplitude imbalance in decibels . Using this expression , combining loss contours are plotted in Figure 4.12 , which emphasize the importance of phase balance over amplitude balance . These computations assume that the signal sources ...
Page 301
... amplitude and phase imbalances are less than 1.3 dB and 15 deg , respectively , while the total output power will be only 0.7 dB below the level that would occur if no amplitude or phase imbalance existed . This example demonstrates ...
... amplitude and phase imbalances are less than 1.3 dB and 15 deg , respectively , while the total output power will be only 0.7 dB below the level that would occur if no amplitude or phase imbalance existed . This example demonstrates ...
Page 305
... amplitude and phase imbalances with a midband insertion loss of 0.25 dB implying a combining efficiency of 94.4 % , excluding the effects of amplitude and phase variation from the amplifiers and the combiner . A combining efficiency of ...
... amplitude and phase imbalances with a midband insertion loss of 0.25 dB implying a combining efficiency of 94.4 % , excluding the effects of amplitude and phase variation from the amplifiers and the combiner . A combining efficiency of ...
Common terms and phrases
achieved active layer amplifier modules amplitude applications bandwidth bias point breakdown voltage capacitance channel temperature characteristic impedance characteristics Class A amplifier coupler device distributed amplifier doping drain current effect electron elements equivalent circuit FET chip frequency function GaAs FET gain gain compression gate breakdown voltage gate finger gate length gate-source given harmonic heat HEMT heterojunction high-power FET IEEE IEEE Trans impedance matching increase input and output input power large-signal linear load impedance load line load-pull loss matching network maximum measured MESFET method Microwave MMIC nonlinear operation optimum output power parameters phase pinch-off power amplifier power combining power FET power output power-added efficiency pulse radar saturated Schottky semiconductor shown in Figure signal simulation small-signal solid-state splitter SSPA structure technique thermal resistance transconductance transistor transmission line tuner VdgB versus via-hole VSWR