High-power GaAs FET Amplifiers
John L. B. Walker
Artech House, Jan 1, 1993 - Technology & Engineering - 369 pages
This book is intended for systems engineers, hybrid and monolithic power amplifier designers, engineers involved in the development of CAD programs, academics, and industrial and goverment researchers. The book is devoted exclusively to high power GaAs FET amplifier design, covering the subject comprehensively, including FET design, circuit design, thermal and reliability analysis, and systems applications.
57 pages matching gate-source in this book
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HighPower GaAs FETs
ComputerAided Design of GaAs FET Power Amplifiers
HighPower GaAs FET Amplifier Design
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achieved active layer amplifier modules amplitude analysis applications bandwidth bias point breakdown voltage C-band capacitance capacitor characteristic impedance characteristics Class A amplifier coupler device distributed amplifier doping drain current effect electron elements equivalent circuit FET chip frequency function gain gain compression gate breakdown voltage gate finger gate length gate-source given harmonic heat HEMT heterojunction high-power FET IEEE IEEE Trans increase input and output input power large-signal linear load impedance load line load-pull loss matching network maximum measured MESFET metal method Microwave MMIC nonlinear operation optimum output power parameters phase phased array pinch-off power amplifier power combining power FET power output power-added efficiency pulse radar reduced reflection coefficient saturated Schottky semiconductor shown in Figure signal simulation small-signal solid-state splitter SSPA structure technique thermal resistance transconductance transistor transmission line tuner VdgB versus via-hole VSWR