Design and Performance of Modulation-doped Field Effect Transistors |
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Contents
CHARGE CONTROL ANALYS IS | 12 |
CRYSTAL ORIENTATION DEP ENDE NCE | 40 |
ANIS OTROPIC TRANSPORT IN QUANTUM | 59 |
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Common terms and phrases
2DEG 3Ga 7As 3GaAs/GaAs MODFET structure 7As spacer layer 7As/GaAs MODFET Acetone AlGaAs AlGaAs/GaAs anisotropic behavior bandgap Bead Mask Exposure calculated capacitance charge control analysis cm/sec cm²/V.sec conduction bands crystal direction Current gain cutoff frequency extrapolation D.C. characteristics D.I. water dB/octave device performance doping drift mobility analysis electric field electron average velocity electron group velocity electron mobilities electron sheet density electron velocity Field Effect Transistor frequency and cutoff GaAs Buffer GaAs MESFET GaAs Substrate gate length group velocity Hall mobilities heterojunction high field I-V measurements increase ionized impurity scattering Karl Suss Contact low field MEFF Mesa methanol minutes molecular beam epitaxy mS/mm N₂ blow dry neighboring devices Nikon Contact Aligner noise figure ns cm-2 Ohmic parameter Photoresist Spin quantum well MODFET quantum well width S-parameter silicon spacer layer thickness superlattice buffer threshold voltage transconductance undoped Al 3Ga velocity enhancement VGS characteristics voltage shift