Proceedings of the Symposia on Reliability of Semiconductor Devices/interconnections and Dielectric Breakdown, and Laser Process for Microelectronic ApplicationsPapers in this volume are from the 180th ECS Meeting, held in held in Phoenix, Arizona, Fall 1991. This symposium addresses all aspects of reliability of semiconductor devices, multilevel interconnection and dielectric breakdown in VLSI and ULSI technologies. The symposium establishes reliability from design through manufacturing. The second part of the symposium addresses laser ablation/etching, laser planarization laser/UV. CVD of metal end dielectric films, laser/UV enhanced etching and deposition processesing liquid phase, and photomodification of surfaces. |
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ablation ADit Al-Cu aluminum Appl applications beam bond breakdown capacitors caused characteristics charge circuit compared constant corrosion curve cycle damage decrease defect degradation density dependence deposition determined devices dielectric distribution effect electric electromigration electron electron trapping enhancement etching experimental experiments failure field Figure films function gate oxide GIDL growth heating higher hole IEEE implant increase indicated induced injection intensity interconnection interface laser layer Lett limited lower mass material measured metal MOSFETs nitrided observed obtained occurs parameters pattern performed Phys plot positive presented pressure production pulse ramp range ratio reduced REFERENCES region relax reliability resistance resolution sample shift shown shown in Fig shows similar SiO2 step stress structure substrate surface technique temperature thermal thickness thin trapping tungsten values void voltage wafer
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Page 69 - Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, TX...
Page 216 - AND DL KWONG Microelectronics Research Center, Department of Electrical and Computer Engineering The University of Texas, Austin, TX...
Page 312 - Scarmozzino, and RM Osgood, Jr. Microelectronics Sciences Laboratories Columbia University, New York, NY 10027...
Page 137 - Optimization of Stud and Via Structures for Minimal Current Crowding and Local Heating in Multilevel Interconnection", in Proc.
Page 240 - ... babies. The hole at the side of the PVC tube through which blood is drawn is machined by a KrF excimer laser.
Page 188 - Extended Abstracts of the 21st Conference on Solid State Devices and Materials, Tokyo, 1989 , pp.
Page 318 - MN Ruberto, X. Zhang, R. Scarmozzino, AE Willner, DV Podlesnik, and RM Osgood, Jr., J. Electrochem. Soc. 138.
Page 273 - Lett. 57, 1425 (1986); NS Gluck, Z. Ying, CE Bartosch, and W. Ho, J. Chem. Phys. 86, 4957 (1987).
Page 220 - ZA Weinberg, DR Young, JA Calise, SA Cohen, JC DeLuca , and VR Deline, Appl. Phys. Lett. 45, 1204 (1984).
Page 254 - ... constant pressure. The excimer laser produced 250 mJ, 20 nsec pulses at 308 nm and a repetition rate of 20 Hz. Additionally, for the experiments described here, the plume optical emission was collected and analyzed. Light was collected by a 7.5 cm. diameter, 500 cm focal length quartz lens, and focused onto the end of a (200 nm diameter) multi-mode fiber optic cable (FOC), 10 m in length. The distal end of the fiber optic cable was coupled to an 0.5 m monochromator equipped with a gated, intensified...