Optical/laser Microlithography, Volume 922Burn J. Lin |
Contents
SESSION 1B MASK TECHNOLOGY II | 28 |
ALIGNMENT AND OVERLAY | 65 |
FUNDAMENTAL ISSUES | 107 |
Copyright | |
9 other sections not shown
Common terms and phrases
accuracy aerial image alignment mark astigmatism axis bake bandwidth beam calculated chrome condenser aberrations Critical Dimension deep UV defect defocus depth of focus design rules device diffraction distortion dose edge entrance pupil etalon etch excimer laser experimental exposure energy exposure field feature Figure film flood exposure focus depth function g-line i-line illumination image field image reversal intensity KrF excimer laser latitude layer lenses light lines and spaces linewidth MacDermid mask measured Microlithography micron nominal numerical aperture offset optical lithography optical system overlay errors parameters partial coherence pattern performance photolithography photoresist pixels plane PMMA position projection lens proximity effect pulse reduction lens resist process resist profile resolution reticle shown in Fig shows sigma silicon simulation slit spectral spherical aberration SPIE submicron substrate Table technique thickness transverse modes Ultratech VLSI wafer stepper wavelength wavelength stabilization width