Materials for microlithography: radiation-sensitive polymers
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Fundamental Limits of Lithography
Practical and Fundamental Aspects of Lithography
A Perspective on Resist Materials for FineLine Lithography
22 other sections not shown
absorbed absorption absorption spectrum acid acrylate anhydride aromatic carbonyl chain scission Chem chemical chlorine chloromethylation contrast copolymerization copolymers cross-linking curve decrease deep UV degradation diffusion dose effect Electrochem electron beam exposure energy epoxy ester etching excimer exposed film thickness formation increase initial irradiation ketone laser layer linewidth lithographic maleic anhydride mask materials methacrylic acid methyl methacrylate molecular weight molecules monomer negative resist Novolak resins observed obtained optical pattern PCEVE-NNVE pendant phenol photochemical photochemistry photoinitiator photons Photopolymers photoresists photosensitizer Phys pixel plasma PMMA poly polymer polymer chain polymerization polysilane polystyrene positive resists Proc produced quantum yield radiation radical radiolysis ratio reaction reactive resist systems samples sensitivity shown in Figure shows silicon solid soluble solution solvent spectra spectrum structure substrate surface Table Technol temperature thermal toluene transfer unexposed vinyl wafer wavelength x-ray