Silicon Carbide 2008--materials, Processing and Devices: Symposium Held March 25-27, 2008, San Francisco, California, U.S.A. |
Contents
Bulk Growth of SiC | 3 |
Alternative Routes to Porous Silicon Carbide | 15 |
Influence of Crystal Growth Conditions on Nitrogen | 23 |
Copyright | |
32 other sections not shown
Common terms and phrases
2008 Materials Research 3C-SiC film a-SiC:H A/cm² Appl atoms band gap basal plane dislocations Burgers vector C-face calculated carbon carrier characteristics cm² cm³ concentration configuration crystal growth dangling bonds defect centers deposited dislocation density DMOSFET dopant doping effect electrical electron emitter energy epilayer epitaxial growth epitaxial layers epiwafer etching fabricated gate grown high temperature homoepitaxial increase interface ion implantation JFET lattice Lett Materials Research Society measured mesa mobility MPS diodes nitrogen observed off-cut ohmic contacts on-axis oxide p-type p-type SiC p-well parameters partial dislocations Phys pin diodes polytype Proc reactor resistivity sample Schottky Schottky diode screw dislocations semiconductor shown in Figure shows Si-face SiC crystal SiC devices SiC substrate SiC wafer silicon carbide simulation stacking faults stress structure substrate surface Symp Synchrotron thermal threshold voltage traps TSDs Von Mises stress wafer X-ray topography