Silicon carbide 2008--materials, processing and devices: symposium held March 25-27, 2008, San Francisco, California, U.S.A.
Materials Research Society, 2008 - Technology & Engineering - 283 pages
Silicon carbide (SiC) is a robust semiconductor material being actively developed for high-power and high-temperature applications, especially in the field of power electronics and sensors for harsh environments. This book, the fifth in a continuing series, focuses on SiC growth, defects, and devices. New developments in the growth of bulk SiC single-crystal materials, advances in the epitaxial growth of SiC, and progress in the characterization of materials properties and defects in SiC are featured. The volume also highlights the development of devices manufactured on this wide-bandgap semiconductor including: innovative device designs; characterization of device and materials properties; and improvements in wide-bandgap processing technology.
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Bulk Growth ofSiC
Alternative Routes to Porous Silicon Carbide
Influence of Crystal Growth Conditions on Nitrogen
32 other sections not shown
2008 Materials Research 3C-SiC film a-SiC:H Appl atoms band gap basal plane dislocations Burgers vector C-face calculated carbon carrier characteristics concentration configuration crystal growth curvature dangling bonds defect centers deposited dislocation density DMOSFET dopant doping effect electrical emitter energy epilayer epitaxial growth epitaxial layers epiwafer etching experimental fabricated gate grown high temperature homoepitaxial increase interface ion implantation JFET lattice Lett Materials Research Society measured mesa mobility MPS diodes nitrogen observed off-axis offcut ohmic contacts on-axis oxide p-type SiC p-well parameters partial dislocations Phys pin diodes polytype Proc reactor region resistivity sample Schottky Schottky diodes screw dislocations semiconductor shown in Figure shows Si-face SiC crystal SiC devices SiC substrate SiC wafer silicon carbide simulation stacking faults stress structure substrate surface susceptor Symp Synchrotron thermal threshold voltage TSDs vacancy wafer X-ray topography