Silicon carbide 2008--materials, processing and devices: symposium held March 25-27, 2008, San Francisco, California, U.S.A.

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Materials Research Society, 2008 - Technology & Engineering - 283 pages
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Silicon carbide (SiC) is a robust semiconductor material being actively developed for high-power and high-temperature applications, especially in the field of power electronics and sensors for harsh environments. This book, the fifth in a continuing series, focuses on SiC growth, defects, and devices. New developments in the growth of bulk SiC single-crystal materials, advances in the epitaxial growth of SiC, and progress in the characterization of materials properties and defects in SiC are featured. The volume also highlights the development of devices manufactured on this wide-bandgap semiconductor including: innovative device designs; characterization of device and materials properties; and improvements in wide-bandgap processing technology.

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Contents

Bulk Growth ofSiC
3
Alternative Routes to Porous Silicon Carbide
15
Influence of Crystal Growth Conditions on Nitrogen
23
Copyright

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