Fabrication of atomic planar doped doubled heterojunction aluminum gallium arsenide/gallium arsenide/aluminum gallium arsenide MODFET's for high power broadband distributed amplifiers

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Cornell University, May, 1988 - Technology & Engineering - 198 pages
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Contents

CHAPTER TITLE PAGE
4
MATERIAL AND BASIC DEVICE OPERATION
5
DEVICE PROCESSING
21

2 other sections not shown

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