Fabrication of Atomic Planar Doped Doubled Heterojunction Aluminum Gallium Arsenide/gallium Arsenide/aluminum Gallium Arsenide MODFET's for High Power Broadband Distributed Amplifiers |
Contents
CHAPTER TITLE PAGE | 9 |
MATERIAL AND BASIC DEVICE OPERATION | 9 |
DEVICE PROCESSING | 21 |
2 other sections not shown
Common terms and phrases
2DEG acetone AlGaAs layer atomic planar doped Bead Mask blown dry breakdown voltage capacitance charge control conducting channel conduction band Dehydration Bake distributed amplifier doped double heterojunction double heterojunction MODFET drain current Drain-gate breakdown voltage dry with N₂ electron gas electron mobilities electron supplying layer envelope equivalent circuit model evaporation and liftoff fabrication field effect transistor Figure four stage disturbed GaAs FET gate breakdown voltage gate evaporation gate metal gate recess grown HEMT heterostructure I-V characteristics increase interface MBE growth mesa etch MESFET MESL methanol MO-CVD MODFET device MODFET structure modulation-doped ohmic contact ohms optimization output Oxide Strip p-type semiconductor parasitic charge performance Photoresist Photoresist Develop planar doped double PROCESS TITLE S-parameters saturated velocity model sheet density shown in Fig source resistance step temperatures total charge transconductance transistor model undoped AlGaAs undoped GaAs layer VDSAT voltage after gate wafer