The Migration Enhanced Epitaxy MethodCornell University, 1990 - 200 pages |
Contents
CHAPTER 2 | 17 |
The forces on electrons and holes | 80 |
Abrupt emitterbase heterojunction | 90 |
Copyright | |
Common terms and phrases
activation and mobility AlGaAs Ankri anneal temperature annealed MEE layer Appl atoms Auger profile band gap Bijan Tadayon Calawa cell conventional MBE method Cornell University crystal quality dopant doping method electrical activation electron concentration emitter ENHANCED EPITAXY METHOD epilayer equation Figure GaAs at low GaAs-Al-GaAs structure growth chamber growth method growth of GaAs growth of GaAs-Al-GaAs growth rate method Hall measurement HBT expert HETEROJUNCTION BIPOLAR TRANSISTOR hole concentration hole sheet density Horikoshi InGaAs interdiffusion Kawashima L. F. Eastman layer at 900 layers were grown low growth rate low substrate temperatures MBE machine MEE method MIGRATION ENHANCED EPITAXY mobility and hole Molecular Beam Epitaxy novel method P. M. Asbeck peak phonon photoluminescence photoluminescence PL Phys PL spectra quality GaAs Raman spectroscopy Raman spectrum Rathbun reduce RHEED Saied Tadayon shutters Solid State Electron ẞmax sticking coefficient surface diffusion length surface morphology thesis undoped GaAs ΑΙ