## Microwave Semiconductor Devices and Circuits, Parts 1-2College of Engineering, University of Michigan, 1969 - Semiconductors |

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### Contents

MICROWAVE MKERS | 1 |

Haddad G I Quantum Mechanical Principles | 17 |

Haddad G I A LargeSignal Analysis of Impatt Diodes | 38 |

9 other sections not shown

### Common terms and phrases

analysis applied approximately assumed atom avalanche breakdown Avalanche Diodes avalanche region bandwidth bias current bias voltage breakdown voltage capacitance characteristic charge coefficient components conduction band continuity equation conversion loss converter current density depletion layer detector determined device diagram diode junction doping drift region effect electric field electrons energy energy-band equivalent circuit experimental expression external circuit Fermi level frequency f frequency ratio GaAs gain gain-bandwidth product given harmonic holes idler circuit IEEE IMPATT diodes impedance increase input intrinsic semiconductor ionization rate large-signal load resistance maximum microwave mixer n-type material n-type semiconductor negative conductance negative resistance noise figure nonlinear obtained occurs ohms operation p-n junction parametric amplifier particle power output quency r-f voltage reactance resonant series resistance shown in Fig sideband signal circuit signal frequency small-signal temperature transit-time tunnel diode typical upper-sideband valence band varactor diode velocity zero