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Union Cemetery, Redwood City, California: The People, Their Lives, Their ...
John G. Edmonds
No preview available - 2009
Performance and perspective of the newly developed highaccuracy maskmaking
Performance data from the EBES4 highspeed reticle generator 180903
ADVANCED PROCESS TECHNOLOGY
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5X reticle aerial image alignment accuracy Bessel beam calibration CD uniformity chrome defects chrome etch chromeless coherence conductive polymers contact hole curves defocus diffraction dimension dose DRAM dry etch EBES4 electron empowerment error etch depth etch process Etec evaluate exposure focus Fourier Hitachi i-line inspection Integrated Circuit Intel Corporation intensity ion beam milling laser layer Line Width Linearity lithography mask manufacturing measurement MEBES metrology tool microns monitor optical Overlay parameters Pareto chart particles pattern pellicle performance phase shift phase-shift mask photomask photoresist plate plot Pockels cell precision printability printed process window PSL spheres Q-switch quartz refractive index resist thickness rim shifter rim width sample Scan scatter scatterometer sensitivity shift mask shown in figure shows Si-resist simulation specifications SPIE stepper substrate technique twin phase edge variation wafer wavelength wet etch writing x-ray mask yield loss