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OVERVIEW OF ELECTRON TRANSPORT IN SEMICON
ELEMENTS OF ELECTRON TRANSPORT
14 other sections not shown
acoustic phonon alloy scattering AlxGai_xAs applied bias applied voltage approximation Average electron velocity ballistic electrons ballistic launcher band edge Boltzmann equation calculated circuit conduction band current density defined deformation potential denotes distribution function doped drift term drift velocity drift-diffusion effective mass elec electric field electron density electron temperature energy band equilibrium error Figure flux function of position graded barrier diode graded heterostructures Gunn diode Hamiltonian HCGD heat-flux heterojunction cathode heterostructures hot electron effect hot electron transport IEEE injection interactions ionized impurities ionized impurities scattering kV/cm lattice launcher diodes lll-V mobility mole fraction momentum Monte Carlo method non-equilibrium non-parabolicity ohmic contacts overlap integral overshoot particle Phys Physics position dependent quantum r-point r-valley region relaxation-time resistors sampling scattering mechanisms scattering rate Schottky barrier SCMC method self-consistent Monte Carlo semiconductor devices space charge spatial super-electron TCMC code technique ternary thermal thermionic emission time-step tion transient transistor transport in semiconductors tron tunneling