Activation and Deactivation of Arsenic in SiliconStanford University, 1996 - 320 pages |
Common terms and phrases
anneal at 750°C arsenic atoms arsenic concentration arsenic deactivation arsenic dose arsenic implant atomic planes BiCMOS bipolar boron marker layer bounce buried boron layer chapter chemical concentration cm 2 arsenic coherent distance coherent fraction Concentration cm³ crystal deactivated arsenic deactivated structures deactivation anneal deactivation occurs deactivation of arsenic deactivation process Depth microns devices diffusion enhancement dislocation loops dopant doped layer electrical activation level electrical solubility electron emitter energy enhanced diffusion Equation EXAFS function germanium Gummel number Hall effect Hall measurements highly doped regions hour anneal implant dose impurities inactive arsenic initial deactivation interplanar distance ion implantation kinetics laser melt annealed lattice lattice constant mechanism of deactivation minutes mobility monoclinic multiple cluster nearest neighbors oxide parameter physical point defects polysilicon positron annihilation process physics Rapid Thermal Annealer S-z data Schematic sheet resistance short channel effect shows silicon SIMS profiles simulation surface thesis wafer X-ray standing wave