Design, Fabrication, and Performance of Aluminum Gallium Arsenide/gallium Arsenide Modulation-doped Field-effect Transistors for High-speed Applications |
Common terms and phrases
2DEG AlGaAs AlGaAs/GaAs analog device annealing temperature barrier height beam behavior bias circuit concentration cross-section gate deposition determined device processing digital device diode doping dose drain electron etch rate evap exposure FLDMRK fmax GaAs gate lines gate metal gate process gate resistance gate width H2O rinse heterojunction I-V characteristics implant increased InGaAs layout linewidth mask measured mesa MESFET microwave microwave device MODFET ohmic contact organic rinse output conductance Oxide strip P(MMA-MAA parameters pattern performance planar PMMA probe propagation delay psec rapid thermal annealing recess etch reduced region resistor resistor loads ring oscillator rinse and dry sample Schottky Schottky barrier Schottky diode self-aligned self-aligned-gate sheet resistance shown in Figure source resistance sputter step substrate superlattice buffer superlattice-buffer T-gate thickness threshold voltage transconductance undercut undoped GaAs uniformly-doped values versus gate length