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Self-aligned Polysilicon Gate Metal-oxide-semiconductor Field Effect ...
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2000A palladium film 2000A palladium gate 50x microscope pictures A/min acetone Actuators B Chemical adhesion of palladium adsorbed Anneal in high-purity annealing in air Applied Physics aqua regia catalytic metal desorption device fabrication process dipole dopant activation anneal Dry etch etchant etching the gate etching uniformity final device fabrication gate after hydrogenation gate oxide gate palladium gate voltages high-purity nitrogen hours in high-purity hydrogen adsorption hydrogen atom hydrogen sensitivity ion implantation Journal of Applied low adhesion LPCVD Lundstrom minutes MOSFET oxygen plasma Palladium gates peeling palladium surface palladium to silicon Pd-gate MOS devices Pd-gate TFTs Pd-gate thin film Pd/1000A densified LTO/Si Petersson phase transition photolithography photoresist polysilicon processing sequence pure hydrogen room temperature sample schematic hydrogen Section 2.2 Sensors and Actuators sequence in Section silicon oxide solvable in acetone spin dry Step Name Description thin film transistor threshold voltage typical hydrogenated TFT undensified wafer wet etching