Key Engineering Materials, Volumes 65-67Trans Tech Publications, 1992 - Materials |
Contents
Optical Spectroscopy of GaAs Layers Grown by MOVPE | 1 |
Optical Control of Electrical and Structural Thin Film Properties | 19 |
Optical Identification of PbO Films Crystal Modification | 27 |
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absorption acceptors alkoxide annealing Appl atom barium titanate BaTiO3 bulk calculated carrier cation ceramic capacitor charge coefficient composition compound concentration conductivity Copyright Trans Tech crystal Curie Curie temperature curves decrease defect density dependence dielectric constant dielectric function dipole domain walls donor dopant doped effect electric field electrical properties electron energy equation exciton experimental ferroelectric Figure films frequency function GaAs grain boundary high temperature impurities increase infrared interface ions laser lattice layer M-centre measurements microstructure modes n-type observed obtained optical orthorhombic oxide oxygen parameters particle PbTe peak permittivity perovskite phase phonon Phys piezoelectric polarization powders PTCR Raman region resistance room temperature sample segregation semiconductors shown in Fig silicon SIMOX sintering solid solution specimens spectrum SrTiO stoichiometry structure substrate superconducting superlattice surface technique tetragonal thermistors thermopower thickness Trans Tech Publications transition metal undoped vacancies values wavelength