Silicon Carbide 2006--materials, Processing and Devices: Symposium Held April 18-20, 2006, San Francisco, California, U.S.A.Michael Dudley |
Contents
Investigation of Dislocation Behavior During Bulk Crystal | 3 |
High Carrier Lifetime BulkGrown 4HSiC Substrates | 11 |
Novel Method for High Speed SiC Vapor Growth | 17 |
Copyright | |
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2006 Materials Research acceptor level activation energies annealing Appl atoms band gap basal plane bias BPDs Burgers vector C/Si ratio carbon carrier cm² cm³ conduction band crystal decrease deep levels defects density deposition devices diodes DLTS dopant doping drift layer electrical electron endolayer epilayer epitaxial layer etch pit fabricated film fluence Forum grown growth rate high temperature HPSI hydrogen etching I-V characteristics images implanted increase interface irradiation JFET laser leakage current Lett Materials Research Society measurements mesa micropipe morphology MOSFET n-type nitrogen observed ohmic contacts on-resistance parameters peak Phys PiN diodes precursor pressure Proc range region room temperature samples Schottky Schottky diodes screw dislocations semiconductor shown in Figure shows Si face SiC substrate SiH4 silicon carbide SIMS SiO2 spectra stress structure substrate Symp technique thermal thickness threshold voltage traps unit cell vanadium wafer