Silicon Carbide 2006--materials, Processing and Devices: Symposium Held April 18-20, 2006, San Francisco, California, U.S.A.Michael Dudley |
Contents
Investigation of Dislocation Behavior During Bulk Crystal | 3 |
High Carrier Lifetime BulkGrown 4HSiC Substrates | 11 |
Novel Method for High Speed SiC Vapor Growth | 17 |
Copyright | |
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2006 Materials Research acceptor level annealing Appl atoms band gap basal plane dislocations bias BPDs Burgers vector C-face C:Si C/Si ratio carbon carrier chemical vapor deposition cm² cm³ crystal deep levels deposition devices diodes DLTS dopant doping drift layer electrical electron endolayer epilayer epitaxial growth epitaxial layer etch pit fabricated film Forum gate grown growth rate high temperature HPSI hydrogen etching I-V characteristics images implanted increase interface irradiation laser leakage current Lett Materials Research Society measurements mesa micropipe MOSFET n-type nitrogen observed ohmic contacts oxide parameters peak Phys PiN diodes polytype precursor pressure Proc region resistance room temperature samples Schottky Schottky diodes screw dislocations semiconductor shown in Figure shows Si face SiC substrates SiH4 silicon carbide spectra stacking faults stress structure substrate surface roughness susceptor Symp TEDS thermal thickness vanadium vapor voltage wafer