Ultrathin SiO2 and High-K Materials for ULSI Gate Dielectrics: Volume 567H. R. Huff Device scaling has been the engine driving the continued pervasiveness of the microelectronics revolution. The SIA roadmap calls for 4-5nm films (oxide equivalent thickness) in 2000, and |
Contents
LowTemperature Formation of SiO2 and High Dielectrics | 3 |
Growth of Thin SiO2 by Spike Rapid Thermal Oxidation | 13 |
Ultrathin Silicon Dioxide Formation by Ozone | 21 |
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A/cm² Appl as-deposited atoms barrier bonding BST films C-V curves capacitance capacitors characteristics chemical chemical vapor deposition cm² conduction band current density defect dielectric constant direct tunneling doped effect electrical Electron Devices electron tunneling ellipsometry energy epitaxial experimental fabricated Figure film thickness films deposited gate current gate dielectric gate oxide gate voltage grown growth high-K IEDM IEEE implant increase injection interface leakage current Lett measured metal MOSFETs MV/cm N₂ nitrogen O₂ observed optical oxide film oxide layer oxide thickness oxygen oxynitride ozone p-type peak perovskite Phys plasma annealing precursor properties reaction RHEED roughness samples semiconductor shown in Fig shows silicon nitride silicon oxide simulation SiO2 SiO2 layer soft breakdown spectra sputtered stack stress structure suboxide substrate surface Ta2Os tantalum oxide tantalum pentoxide Technology thermal oxidation thin film TiO2 transistor traps tunneling current ultrathin valence band wafers