Proceedings of the 6th International Microelectronics Conference: May 30-June 1, 1990, Nippon Convention Center, Tokyo, Japan |
Common terms and phrases
adhesion adhesion strength agglomerates alloy alumina alumina substrate aluminium nitride aluminum binder bonding capacitance cathode characteristics cofired components composition conductor copper conductor cycles density developed devices diameter dielectric constant dissipation factor effect electrical electronic epoxy evaluated fabricated Figure firing temperature frequency glass ceramic glass powder heat hybrid IMC 1990 Proceedings IMST IMST substrate increase insulation resistance interconnection interface laminate layout lead LSI chip manufacturing materials measured metal method microstructure mounting mullite multilayer ceramic oxide oxygen package pads particle pattern pitch plating PLDL polyimide polyimide resin printing properties refiring reflow reliability resistor RuO2 samples shape memory alloys shear sheet resistivity shown in Fig shows shrinkage silicon sintering solder bumps solder paste structure substrate surface Table thermal conductivity thermal resistance thermal shock thin film Tokyo viscosity voltage wafer width wire wire bonding